Senior Principal RF PA Design Engineer

Senior Principal RF PA Design Engineer for Cellphone & SATCOM market Location: San Diego, CA (Preferred) or Remote Employment Type: Full-Time or Contractor Work Authorization: US Citizen, Green Card, or Authorized to work in the USA Industry: High-Performance RF & Microwave Semiconductors About Finwave Semiconductor Finwave Semiconductor is a fabless semiconductor company, headquartered in Waltham (MA, USA) that uses innovative transistor designs and breakthrough process technologies to unlock the full potential of Gallium Nitride (GaN). Founded by prominent MIT innovators and driven by industry leaders, Finwave is shaping the future of RF Communications through revolutionary advancements in energy efficiency and performance for applications in markets such as aerospace and defense, mobile infrastructure, smartphones, medical devices, and cloud computing. Job Details Finwave Semiconductor is seeking a Senior Principal Design Engineer to spearhead the development of next-generation RF Power Amplifiers (PAs) for the mobile handset and SATCOM CPE markets. Leveraging our breakthrough 5V e-mode GaN-on-Si technology, you will push the boundaries of energy efficiency and integration in RF Front-End (RFFE) modules. Role Overview As a Senior Principal Design Engineer, you won't just be designing circuits; you will be the primary technical authority for our mobile handset and SATCOM roadmap. Reporting directly to the Director of Engineering, you will lead the design and prototyping of RF ICs and integrated modules that will power the next generation of 5G/6G smartphones and SATCOM Customer Premises Equipment (CPE). Key Responsibilities IP Development: Identify and document novel circuit architectures and design techniques to contribute to Finwave’s growing Intellectual Property (IP) portfolio. Technology Integration: Utilize Finwave’s E-Mode GaN-on-Si processes to achieve breakthroughs in power density and energy efficiency for 5G/6G and SATCOM CPE. Advanced PA Design: Execute high-performance MMIC/Hybrid PA designs for mobile RF front ends, optimized for Envelope Tracking (ET) and Average Power Tracking (APT) operation. End-to-End Development: Contribute to the full design lifecycle, including architecture support, tape-out, prototype characterization, and debugging for high-volume production Collaboration: Work cross-functionally to document designs and ensure thermal management strategies are integrated into high-power density applications. Qualifications & Skills Education: Master’s or PhD in Electrical Engineering, RF/Microwave Engineering, or Physics. Experience: 20+ years of experience in RF semiconductor design, with a proven track record of shipping high-volume PA products for the global smartphone market. Strong teamwork, communication, organization, and documentation skills. Industry Standards: In-depth understanding of RFFE requirements for Tier-1 smartphone OEMs and current 3GPP standards. Innovation Mindset: Proven ability to develop creative solutions for complex RF challenges, supporting the generation of internal design specs and patents. Technical Expertise Device Physics: Mastery of GaN (preferred), III/V (GaAs) or SOI. compound semiconductor device physics and advanced modeling. Thermal Design: Deep understanding of thermal management strategies for high-power density applications in a flip-chip configuration. EDA Tools: Expert proficiency in Keysight ADS and Ansys HFSS for MMIC and laminate co-simulation. Linearity Management: Expertise in managing the trade-offs between Noise Figure, Gain, and Input Third-Order Intercept Point (IIP3) for high-performance mobile RFFEs. Hands-on experience with RF/microwave test equipment such as network analyzer, probe station, source/load pull system, noise figure measurements, and/or signal sources/analyzers that deal with modulated signals. Familiarity with Noise Theory is a plus: Design Low Noise Amplifier (LNA), including impedance matching and impact of parasitic losses on the Noise Figure (NF). What We Offer Innovation: The opportunity to work with world-class innovators on revolutionary 5V e-mode GaN technology. Impact: Shape the future of mobile and SATCOM communications by defining the next generation of energy-efficient hardware. Compensation: Competitive base salary, 401(k) contribution, healthcare plan, and stock options. Pay: $180,000.00 - $255,000.00 per year Benefits 401(k) Dental insurance Flexible schedule Parental leave Retirement plan Work Location: Hybrid remote in San Diego, CA 92121